Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3279 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SC3279 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SC3279 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current Pulsed (Note 1) ICP 5 A Base current IB 0.2 A Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ⎯ ⎯ V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 6 ⎯ ⎯ V hFE (1) (Note 2) VCE = 1 V, IC = 0.5 A 140 ⎯ 600 DC current gain hFE (2) VCE = 1 V, IC = 2 A 70 200 ⎯ Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 50 mA ⎯ 0.2 0.5 V Base-emitter voltage VBE VCE = 1 V, IC = 2 A ⎯ 0.86 1.5 V Transition frequency fT VCE = 1 V, IC = 0.5 A ⎯ 150 ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 27 ⎯ pF Note 2: hFE (1) classification L: 140~240, M: 200~330, N: 300~450, P: 420~600 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
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