2SC3326 datasheet(2/5 Pages) TOSHIBA

Teilenummer	2SC3326

Bauteilbeschribung	Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC3326

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 25 V, IC = 0

⎯

0.1

μA

DC current gain

hFE

(Note)

VCE = 2 V, IC = 4 mA

200

⎯

1200

Collector-emitter saturation voltage

VCE (sat)

IC = 30 mA, IB = 3 mA

⎯

0.042

0.1

V

Base-emitter voltage

VBE

VCE = 2 V, IC = 4 mA

⎯

0.61

⎯

V

Transition frequency

fT

VCE = 6 V, IC = 4 mA

⎯

30

⎯

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

4.8

7

pF

Turn-on time

ton

⎯

160

⎯

Storage time

tstg

⎯

500

⎯

Switching time

Fall time

tf

Duty cycle <= 2%

⎯

130

⎯

ns

Note: hFE classification A: 200~700, B: 350~1200

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