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2SC3328 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer 2SC3328
Bauteilbeschribung  NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3328 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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2SC3328
2006-11-09
3
Collector current IC (A)
VCE – IC
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
VCE – IC
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
0
0.4
0.8
1.2
1.6
2.0
2.4
IB = 5 mA
10
20
15
Common emitter
Ta = 25°C
30
40
50
1
0
0
0.8
0.6
0.4
0.2
0.4
0.8
1.2
1.6
2.0
2.4
IB = 5 mA
10
15
20
30
40
50
Common emitter
Ta = 100°C
0.6
1
0
0
0.8
0.4
0.2
0.4
0.8
1.2
1.6
2.0
2.4
IB = 5 mA
10
20
30
50
70
Common emitter
Ta = −55°C
40
15
10
0.01
500
Ta = 100°C
25
0.03
0.1
0.3
1
30
50
100
300
Common emitter
VCE = 2 V
−55
Common emitter
Ta = 25°C
20
15
10
0
IB = 5 mA
25
2.0
0
0
1.6
1.2
0.8
0.4
2
4
6
8
10
12
35
0.01
0.01
0.03
0.1
0.3
1
0.03
0.05
0.1
0.3
0.5
Common emitter
IC/IB = 20
Ta = 100°C
25
−55


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