2SC3420 datasheet(2/4 Pages) TOSHIBA

Teilenummer	2SC3420

Bauteilbeschribung	Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SC3420

2006-11-09

2

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 40 V, IE = 0

―

100

nA

Emitter cut-off current

IEBO

VEB = 8 V, IC = 0

―

100

nA

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

20

―

V

hFE (1)

(Note 3)

VCE = 2 V, IC = 0.5 A

140

―

600

DC current gain

hFE (2)

VCE = 2 V, IC = 4 A

70

―

Collector-emitter saturation voltage

VCE (sat)

IC = 4 A, IB = 0.1 A

―

1.0

V

Base-emitter voltage

VBE

VCE = 2 V, IC = 4 A

―

1.5

V

Transition frequency

fT

VCE = 2 V, IC = 0.5 A

―

100

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

40

―

pF

Note 3: hFE (1) classification Y: 140 to 240, GR: 200 to 400, BL: 300 to 600

Marking

C3420

Part No. (or abbreviation code)

Characteristics indicator

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

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