Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3421 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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2SC3421 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 4 page 2SC3421 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (mA) hFE – IC Collector current IC (mA) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Safe Operating Area Collector-emitter voltage VCE (V) 0 0 Common emitter Tc = 25°C 1200 600 6 8 12 10 16 4 5 25 10 IB = 1 mA 0 7 4 2 200 400 800 1000 2 14 3 (1) Tc = Ta Infinite heat sink (2) No heat sink 0 40 60 100 80 20 12 0 4 2 6 (1) (2) 120 140 160 8 10 25 10 100 Common emitter VCE = 5 V 10 30 50 500 30 100 1000 Tc = 100°C −25 300 3 300 −25 Common emitter VCE = 5 V 1000 400 600 800 Tc = 100°C 25 200 0.2 0.4 0.8 1.0 0.6 0 0 1.2 3 10 30 100 300 10 50 300 500 1000 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature 100 3000 IC max (pulsed)* IC max (continuous)* VCEO max 1 ms* 10 ms* 100 ms* DC operation Tc = 25°C 30 −25 Common emitter IC/IB = 10 3 1 0.01 0.05 0.1 30 100 Tc = 100°C 25 1000 300 10 0.03 0.3 0.5 |
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