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2SC3425 Datenblatt(PDF) 5 Page - Toshiba Semiconductor

Teilenummer 2SC3425
Bauteilbeschribung  Silicon NPN Triple Diffused Type (PCT Process)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3425 Datenblatt(HTML) 5 Page - Toshiba Semiconductor

  2SC3425_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 5Page - Toshiba Semiconductor 2SC3425_06 Datasheet HTML 6Page - Toshiba Semiconductor  
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2SC3425
2006-11-09
5
Pulse width tw (s)
rth – tw
Collector-emitter voltage VCE (V)
Safe Operating Area
0.003
3
30
100
300
1000
0.005
0.01
0.03
1
3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature
IC max (continuous)
IC max (pulsed)*
VCEO max
10 μs*
100 μs*
DC operation
Tc = 25°C
1 ms*
10 ms*
0.1
0.3
10
0.05
0.5
100 ms*
0.001
1000
0.01
0.1
100
10
1
100
300
3
30
10
1
0.3
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)


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