2SC3425

2006-11-09

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

2SC3425

Switching Regulator and High-Voltage Switching

Applications

High-Speed DC-DC Converter Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

500

V

Collector-emitter voltage

400

V

Emitter-base voltage

7

V

DC

0.8

Collector current

Pulse

1.5

A

Base current

0.5

A

Ta = 25°C

1.2

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8H1A

Weight: 0.82 g (typ.)