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1SS412 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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1SS412 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS412 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V (typ.) Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10 ms) IFSM 1 * A Power dissipation P 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 ∼150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 0.7 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Forward voltage VF ― IF = 100 mA ― 1.0 1.3 V Reverse current IR ― VR = 80 V ― 0.1 10 nA Total capacitance (between cathode and anode) CT ― VR = 0, f = 1 MHz ― 3.0 ― pF Equivalent Circuit (Top View) Marking P9 JEDEC ― JEITA SC-70 TOSHIBA 1-2P1C Weight: 0.006 g (typ.) Unit: imm |
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