Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ342 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SJ342 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SJ342 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825 Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS −50 V Gate-source voltage VGSS −7 V DC drain current ID −50 mA Drain power dissipation PD 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = −7 V, VDS = 0 ⎯ ⎯ −1 μA Drain-source breakdown voltage V (BR) DSS ID = −100 μA, VGS = 0 −50 ⎯ ⎯ V Drain cut-off current IDSS VDS = −50 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshould voltage Vth VDS = −5 V, ID = −0.1 mA −0.8 ⎯ −2.5 V Forward transfer admittance ⎪Yfs⎪ VDS = −5 V, ID = −10 mA 15 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = −10 mA, VGS = −4 V ⎯ 20 50 Ω Input capacitance Ciss VDS = −5 V, VGS = 0, f = 1 MHz ⎯ 10.5 ⎯ pF Reverse transfer capacitance Crss VDS = −5 V, VGS = 0, f = 1 MHz ⎯ 1.9 ⎯ pF Output capacitance Coss VDS = −5 V, VGS = 0, f = 1 MHz ⎯ 7.2 ⎯ pF Turn-on time ton ⎯ 0.15 ⎯ Switching time Turn-off time toff VDD = −5 V, ID = −10 mA, VGS = 0~−4 V ⎯ 0.13 ⎯ μs Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1E Weight: 0.13 g (typ.) |
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