2SD1140 datasheet(4/5 Pages) TOSHIBA

Teilenummer	2SD1140

Bauteilbeschribung	Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

2SD1140

2006-11-21

4

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

VBE (sat) – IC

Ambient temperature Ta (°C)

PC – Ta

10

Common emitter

IC/IB = 1000

0.002

0.1

1

0.1

3

Ta = −50°C

100

25

3

0.3

0.01

0.03

0.3

0.5

1

5

0

0.2

0.8

20

40

80

100

140

60

120

0.4

1.0

0.6

160

1

3

10

30

10

0.5

3000

100

300

500

1000

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated

linearly with increase in

temperature.

IC max

(continuous)

IC max (pulsed)*

VCEO max

1 ms*

10 ms*

10 μs*

DC operation

(Ta = 25°C)

30

50

100 μs*

2 s*

300 ms*

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