1SS419

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS419

High-Speed Switching Applications

•

Small package

•

•

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

45

V

Reverse voltage

40

V

Maximum (peak) forward current

200

mA

Average forward current

100

mA

Surge current (10 ms)

1

A

Power dissipation

P *

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−40~100

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*

Mounted on a glass-epoxy circuit board of 20 × 20 mm,

pad dimensions of 4 × 4 mm.

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

―

0.28

―

―

0.36

―

Forward voltage

―

0.56

0.62

V

Reverse current

―

―

5

μA

Total capacitance

―

15

―

pF

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-1K1A

Weight: 0.0011 g (typ.)

Unit: mm

sESC

X