Datenblatt-Suchmaschine für elektronische Bauteile |
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1SS419 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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1SS419 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS419 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications • Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 1 A Power dissipation P * 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 1 mA ― 0.28 ― VF (2) IF = 10 mA ― 0.36 ― Forward voltage VF (3) IF = 50 mA ― 0.56 0.62 V Reverse current IR VR = 40 V ― ― 5 μA Total capacitance CT VR = 0, f = 1 MHz ― 15 ― pF Equivalent Circuit (Top View) Marking JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Unit: mm sESC X |
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