2SK1825

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK1825

High Speed Switching Applications

Analog Switch Applications

• 4 V gate drive

• High speed

• Enhancement-mode

• Small package

Equivalent Circuit

Characteristics

Symbol

Rating

Unit

Drain-source voltage

50

V

Gate-source voltage

10

V

DC drain current

50

mA

Drain power dissipation

300

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1E

Weight: 0.13 g (typ.)