Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2267 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SK2267 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2267 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 30 A — 12 15 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 30 A — 8 11 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 30 A 40 60 — S Input capacitance Ciss — 5400 — Reverse transfer capacitance Crss — 920 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 2600 — pF Rise time tr — 30 — Turn−on time ton — 60 — Fall time tf — 65 — Switching time Turn–off time toff — 220 — ns Total gate charge (Gate–source plus gate–drain) Qg — 170 — Gate–source charge Qgs — 110 — Gate–drain (“miller”) charge Qgd VDD ≈ 48 V, VGS = 10 V, ID = 60 A — 60 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 60 A Pulse drain reverse current (Note 1) IDRP — — — 240 A Forward voltage (diode) VDSF IDR = 60 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 150 — ns Reverse recovered charge Qrr IDR = 60 A, VGS = 0 V dIDR / dt = 50 A / μs — 0.3 — μC Marking 2SK2267 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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