Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ512 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SJ512 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ512 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = −250 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −250 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −1.5 — −3.5 V Drain−source ON resistance RDS (ON) VGS = −10 V, ID = −2.5 A — 1.0 1.25 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 1.8 3.7 — S Input capacitance Ciss — 800 — Reverse transfer capacitance Crss — 80 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 250 — pF Rise time tr — 16 — Turn−on time ton — 35 — Fall time tf — 9 — Switching time Turn−off time toff — 70 — ns Total gate charge (Gate−source plus gate−drain) Qg — 22 — Gate−source charge Qgs — 14 — Gate−drain (“miller”) charge Qgd VDD ≈ −200 V, VGS = −10 V, ID = −5 A — 8 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 2.0 V Reverse recovery time trr — 205 — ns Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V dIDR / dt = 100 A / μs — 2.1 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. J512 Part No. (or abbreviation code) |
Ähnliche Teilenummer - 2SJ512_06 |
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Ähnliche Beschreibung - 2SJ512_06 |
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