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2SJ512 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer 2SJ512
Bauteilbeschribung  Silicon P Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ512 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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2SJ512
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = −250 V, VGS = 0 V
−100
μA
Drain−source breakdown
voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−250
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−1.5
−3.5
V
Drain−source ON resistance
RDS (ON)
VGS = −10 V, ID = −2.5 A
1.0
1.25
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
1.8
3.7
S
Input capacitance
Ciss
800
Reverse transfer capacitance
Crss
80
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
250
pF
Rise time
tr
16
Turn−on time
ton
35
Fall time
tf
9
Switching time
Turn−off time
toff
70
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
22
Gate−source charge
Qgs
14
Gate−drain (“miller”) charge
Qgd
VDD ≈ −200 V, VGS = −10 V,
ID = −5 A
8
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−5
A
Pulse drain reverse current
(Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
205
ns
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
dIDR / dt = 100 A / μs
2.1
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
J512
Part No. (or abbreviation code)


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