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2SJ668 Datenblatt(Datasheet) 4 Page - Toshiba Semiconductor

Teile-Nr. 2SJ668
Beschreibung  Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SJ668
2006-11-17
4
RDS (ON) − Tc
Case temperature Tc (°C)
0
−0.4
−0.1
−0.3
−0.2
−40
−80
160
0
40
120
80
Common source
Pulse test
ID = −5 A
−2.5
−1.2
IDR − VDS
Drain
−source voltage VDS (V)
0.1
10
0.2
0
1.2
0.6
0.4
0.8
1.0
Common source
Tc
= 25°C
Pulse test
−10
−5
−3
−1
VGS = 0 V
Case temperature Tc (°C)
PD − Tc
40
10
20
30
0
0
80
200
40
160
Vth − Tc
Case temperature Tc (°C)
0
−80
0
40
80
120
160
−40
−2.0
−0.4
−1.2
−0.8
−1.6
Common source
VDS = −10 V
ID = 1 mA
Pulse test
Capacitance – VDS
Drain
−source voltage VDS (V)
10
100
1000
10000
−0.1
−1
−10
−100
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
1
VGS = −10 V
VGS = −4 V
−5
−2.5
−1.2
120
Total gate charge Qg (nC)
Dynamic input/output
characteristics
−50
−40
0
−30
−20
−10
0
25
30
10
5
−10
−5
−20
−25
0
−15
VGS
VDS
VDD = −48 V
−12V
−24V
Common source
ID = −5 A
Ta
= 25°C
Pulse test
20
15




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