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2SJ668 Datenblatt(Datasheet) 1 Page - Toshiba Semiconductor

Teile-Nr. 2SJ668
Beschreibung  Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SJ668
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−5
A
Drain current
Pulse(Note 1)
IDP
−20
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω,
IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.35 g (typ.)




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