Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2614 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SK2614 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2614 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 50 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VDS = 4 V, ID = 5 A — 0.055 0.08 Drain−source ON-resistance RDS (ON) VDS = 10 V, ID = 10 A — 0.032 0.046 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 7 13 — S Input capacitance Ciss — 900 — Reverse transfer capacitance Crss — 130 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 370 — pF Rise time tr — 15 — Turn−on time ton — 25 — Fall time tf — 30 — Switching time Turn−off time toff Duty ≤ 1%, tw = 10 μs — 100 — ns Total gate charge (gate−source plus gate−drain) Qg — 25 — Gate−source charge Qgs — 19 — Gate−drain (“Miller”) charge Qgd VDD ≈ 40 V, VGS = 10 V, ID = 20 A — 6 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) IDRP — — — 50 A Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 60 — ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs — 45 — μC Marking 0 V 10 V VGS VDD ≈ 30 V ID = 10 A OUT K2614 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Ähnliche Teilenummer - 2SK2614_06 |
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Ähnliche Beschreibung - 2SK2614_06 |
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