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2SK2614 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer 2SK2614
Bauteilbeschribung  Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2614 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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2SK2614
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 50 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VDS = 4 V, ID = 5 A
0.055
0.08
Drain−source ON-resistance
RDS (ON)
VDS = 10 V, ID = 10 A
0.032
0.046
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
7
13
S
Input capacitance
Ciss
900
Reverse transfer capacitance
Crss
130
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
370
pF
Rise time
tr
15
Turn−on time
ton
25
Fall time
tf
30
Switching time
Turn−off time
toff
Duty ≤ 1%, tw = 10 μs
100
ns
Total gate charge (gate−source
plus gate−drain)
Qg
25
Gate−source charge
Qgs
19
Gate−drain (“Miller”) charge
Qgd
VDD ≈ 40 V, VGS = 10 V, ID = 20 A
6
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
20
A
Pulse drain reverse current
(Note 1)
IDRP
50
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
60
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs
45
μC
Marking
0 V
10 V
VGS
VDD ≈ 30 V
ID = 10 A
OUT
K2614
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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