2SK2700_06 datasheet(2/6 Pages) TOSHIBA

Teilenummer	2SK2700

Bauteilbeschribung	Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK2700

2006-11-10

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±30 V, VDS = 0 V

—

±10

μA

Gate–source breakdown voltage

V (BR) GSS

IG = ±10 μA, VDS = 0 V

±30

—

V

Drain cut–off current

IDSS

VDS = 720 V, VGS = 0 V

—

100

μA

Drain–source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

900

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

—

4.0

V

Drain–source ON resistance

RDS (ON)

VGS = 10 V, ID = 1.5 A

—

3.7

4.3

Ω

Forward transfer admittance

|Yfs|

VDS = 20 V, ID = 1.5 A

0.65

2.6

—

S

Input capacitance

Ciss

—

750

—

Reverse transfer capacitance

Crss

—

10

—

Output capacitance

Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

—

70

—

pF

Rise time

tr

—

15

—

Turn–on time

ton

—

55

—

Fall time

tf

—

30

—

Switching time

Turn–off time

toff

—

110

—

ns

Total gate charge (gate–source

plus gate–drain)

Qg

—

25

—

Gate–source charge

Qgs

—

13

—

Gate–drain (“miller”) Charge

Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 3 A

—

12

—

nC

Source–Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

3

A

Pulse drain reverse current

(Note 1)

IDRP

—

9

A

Forward voltage (diode)

VDSF

IDR = 3 A, VGS = 0 V

—

−1.9

V

Reverse recovery time

trr

—

1100

—

ns

Reverse recovery charge

Qrr

IDR = 3 A, VGS = 0 V

dIDR / dt = 100 A / μs

—

7.2

—

μC

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K2700

Part No. (or abbreviation code)

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