2SK2884

2006-11-10

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)

2SK2884

Chopper Regulator, DC−DC Converter Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

800

V

800

V

Gate−source voltage

±30

V

DC (Note 1)

5

A

Drain current

Pulse (Note 1)

15

A

Drain power dissipation

100

W

Single pulse avalanche energy

(Note 2)

370

mJ

Avalanche current

5

A

Repetitive avalanche energy (Note 3)

10

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.25

°C / W

Thermal resistance, channel to

ambient

83.3

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)