Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3371 Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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2SK3371 Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3371 2006-11-08 5 Safe operating area Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (s) Drain-source voltage VDS (V) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-c) = 6.25°C/W Single pulse Duty = 0.5 0.2 0.1 0.05 0.02 0.01 0 25 50 75 100 125 150 20 40 60 80 100 −15 V 15 V Test circuit Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 100 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 0.01 1 10 100 1000 0.1 1 10 ID max (pulsed) * VDSS max ID max (continuous) DC Tc = 25°C 100 μs * 1 ms * * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. |
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