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2SK3374 Datenblatt(PDF) 5 Page - Toshiba Semiconductor

Teilenummer 2SK3374
Bauteilbeschribung  Silicon N Channel MOS Type Switching Regulator Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3374 Datenblatt(HTML) 5 Page - Toshiba Semiconductor

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2SK3374
2006-11-06
5
rth − tw
Safe operating area
EAS − Tch
Pulse width tw (S)
Channel temperature (initial) Tch (°C)
−15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 203 mH
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅
⋅
⋅
=
VDD
BVDSS
BVDSS
2
I
L
2
1
ΕAS
0.001
0.1
1
3
0.3
0.01
10
μ
100
μ
1 m
10 m
1
10
100
T
PDM
t
Duty
= t/T
Rth (ch-a) = 96.1°C/W
Duty
= 0.5
0.1
Single Pulse
0.02
0.0005
0.003
0.03
0.05
0.5
100 m
0.01
0.05
0.2
0.001
0.1
0.01
0.1
1
10
10
100
1000
*: Single nonrepetitive pulse
Ta
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulsed) *
100
μs *
DC operation
Ta
= 25°C
1 ms *
VDSS max
1
0
25
30
60
90
150
120
50
75
100
125
150
Drain-source voltage VDS (V)


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