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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK3566 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SK3566 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  2SK3566 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VGS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A ⎯ 5.6 6.4 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 50 ⎯ pF Rise time tr ⎯ 20 ⎯ Turn-on time ton ⎯ 60 ⎯ Fall time tf ⎯ 30 ⎯ Switching time Turn-off time toff ⎯ 100 ⎯ ns Total gate charge Qg ⎯ 12 ⎯ Gate-source charge Qgs ⎯ 7 ⎯ Gate-drain charge Qgd VDD ∼− 400 V, VGS = 10 V, ID =2.5 A ⎯ 5 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 2.5 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 7.5 A Forward voltage (diode) VDSF IDR =2.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 720 ⎯ ns Reverse recovery charge Qrr IDR = 2.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 3.6 ⎯ μC Marking RL = 133 Ω 0 V 10 V VGS VDD ∼− 200 V ID = 1.5 A VOUT 50 Ω Duty <= 1%, tw = 10 μs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3566 Part No. (or abbreviation code) |
Ähnliche Teilenummer - 2SK3566 |
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Ähnliche Beschreibung - 2SK3566 |
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