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TC7SZ08F Datenblatt(PDF) 4 Page - Toshiba Semiconductor

Teilenummer TC7SZ08F
Bauteilbeschribung  2 Input AND Gate
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SZ08F Datenblatt(HTML) 4 Page - Toshiba Semiconductor

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TC7SZ08F/FU
2007-11-01
4
AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min.
Max.
Unit
1.8
2.0
5.2
10.0
2.0
10.5
2.5
± 0.2
0.8
3.4
7.0
0.8
7.5
3.3
± 0.3
0.5
2.6
4.7
0.5
5.0
CL = 15 pF, RL = 1 MΩ
5.0
± 0.5
0.5
2.2
4.1
0.5
4.4
3.3
± 0.3
1.5
3.3
5.2
1.5
5.5
Propagation delay time
tpLH
tpHL
CL = 50 pF, RL = 500 Ω
5.0
± 0.5
0.8
2.7
4.5
0.8
4.8
ns
Input capacitance
CIN
0~5.5
4
pF
3.3
20
Power dissipation capacitance
CPD
(Note 4)
5.5
25
pF
Note 4: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr.) = CPD・VCC・fIN + ICC


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