TC7WH02FC datasheet(2/5 Pages) TOSHIBA

Teilenummer	TC7WH02FC

Bauteilbeschribung	CMOS Digital Integrated Circuit Silicon Monolithic Dual 2-Input NOR Gate

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TC7WH02FC

2007-11-01

2

Operating Ranges

Characteristics

Symbol

Rathing

Unit

Power supply voltage

VCC

2.0~5.5

V

Input voltage

VIN

0~5.5

V

Output voltage

VOUT

0~VCC

V

Operating temperature

Topr

−40~85

°C

0~100 (VCC = 3.3 V ± 0.3 V)

Input rise and fall time

dt/dv

0~20 (VCC = 5 V ± 0.5 V)

ns/V

DC Electrical Characteristics

Ta = 25°C

Ta =

−40~85°C

Characteristic

Symbol

Test condition

VCC (V)

Min.

Typ.

Max.

Min.

Max.

unit

2.0

1.5

⎯

1.5

⎯

High-level input voltage

VIH

⎯

3.0~5.5

VCC

× 0.7

⎯

VCC

× 0.7

⎯

2.0

⎯

0.5

⎯

0.5

Low-level input voltage

VIL

⎯

3.0~5.5

⎯

VCC

× 0.3

⎯

VCC

× 0.3

V

2.0

1.9

2.0

⎯

1.9

⎯

3.0

2.9

3.0

⎯

2.9

⎯

IOH = −50 μA

4.5

4.4

4.5

⎯

4.4

⎯

IOH = −4 mA

3.0

2.58

⎯

2.48

⎯

High-level output voltage

VOH

VIN = VIL

IOH = −8 mA

4.5

3.94

⎯

3.80

⎯

2.0

⎯

0.0

0.1

⎯

0.1

3.0

⎯

0.0

0.1

⎯

0.1

IOL = 50 μA

4.5

⎯

0.0

0.1

⎯

0.1

IOL = 4 mA

3.0

⎯

0.36

⎯

0.44

Low-level output voltage

VOL

VIN = VIL

or VIH

IOL = 8 mA

4.5

⎯

0.36

⎯

0.44

V

Input leakage current

IIN

VIN = 5.5 V or GND

0~5.5

⎯

±0.1

⎯

±1.0

μA

Quiescent supply current

ICC

VIN = VCC or GND

5.5

⎯

2.0

⎯

20.0

μA

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