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TC59LM913AMG-50 Datenblatt(PDF) 6 Page - Toshiba Semiconductor

Teilenummer TC59LM913AMG-50
Bauteilbeschribung  MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC59LM913AMG-50 Datenblatt(HTML) 6 Page - Toshiba Semiconductor

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TC59LM913AMG-50
2005-11-08
6/46
Rev 1.1
RECOMMENDED DC OPERATING CONDITIONS
(VDD=2.5V ± 0.15V, VDDQ=2.5V ± 0.15V, TCASE = 0~85°C)
SYMBOL
PARAMETER
MAX
UNIT
NOTES
IDD1S
Operating Current
tCK = min, IRC = min ;
Read/Write command cycling ;
0 V
≤ VIN ≤ VIL (AC) (max), VIH (AC) (min) ≤ VIN ≤ VDDQ ;
1 bank operation, Burst length
= 4 ;
Address change up to 2 times during minimum IRC.
240
1, 2
IDD2N
Standby Current
tCK = min, CS = VIH, PD = VIH ;
0 V
≤ VIN ≤ VIL (AC) (max), VIH (AC) (min) ≤ VIN ≤ VDDQ ;
All banks: inactive state ;
Other input signals are changed one time during 4
× tCK.
100
1, 2
IDD2P
Standby (power down) Current
tCK = min, CS = VIH, PD = VIL (Power Down) ;
0 V
≤ VIN ≤ VDDQ ;
All banks: inactive state
80
1, 2
IDD4W
Write Operation Current (4 Banks)
8 Bank Interleaved continuous burst write operation ;
tCK = min, IRC = min ;
Burst Length
= 4, CAS Latency = 4 ;
0 V
≤ VIN ≤ VIL (AC) (max), VIH (AC) (min) ≤ VIN ≤ VDDQ ;
DQ and DQS inputs change twice per clock cycle
350
1, 2
IDD4R
Read Operation Current (4 Banks)
8 Bank Interleaved contious burst read operation ;
tCK = min, IRC = min, IOUT = 0mA ;
Burst Length
= 4, CAS Latency = 4 ;
0 V
≤ VIN ≤ VIL (AC) (max), VIH (AC) (min) ≤ VIN ≤ VDDQ ;
Address inputs change once per clock cycle.
Read data change twice per clock cycle.
350
1, 2
IDD5B
Burst Auto Refresh Current
Refresh command at every IREFC interval ;
tCK = min, IREFC = min ;
CAS
Latency
= 4 ;
0 V
≤ VIN ≤ VIL (AC) (max), VIH (AC) (min) ≤ VIN ≤ VDDQ ;
Address inputs change up to 2 times during minimum IREFC.
DQ and DQS inputs change twice per clock cycle.
250
1, 2, 3
IDD6
Self-Refresh Current
Self-Refresh mode ;
PD
= 0.2 V, 0 V ≤ VIN ≤ VDDQ
20
mA
2
Notes: 1.
These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of
tCK, tRC and IRC.
2.
These parameters defines the current between VDD and VSS.
3. IDD5B is specified under burst refresh condition. Actual system should use distributed refresh that meet tREFI
specification.


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