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TC74AC258F Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer TC74AC258F
Bauteilbeschribung  CMOS Digital Integrated Circuit Silicon Monolithic
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74AC258F Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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TC74AC257,258P/F/FN
2007-10-01
3
System Diagram
TC74AC257
TC74AC258
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5~7.0
V
DC input voltage
VIN
−0.5~VCC + 0.5
V
DC output voltage
VOUT
−0.5~VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±50
mA
DC output current
IOUT
±50
mA
DC VCC/ground current
ICC
±100
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
−65~150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40~65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.


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