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TLP1243C8 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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TLP1243C8 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TLP1243(C8) 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Forward current IF 30 mA Forward current derating (Ta>25°C) ΔIF/°C −0.28 mA/°C Reverse voltage VR 5 V Collector-emitter voltage VCEO 35 V Emitter-collector voltage VECO 5 V Collector power dissipation PC 75 mW Collector power dissipation derating (Ta>25℃) ΔPC/°C −1 mW/°C Collector current IC 50 mA Operating temperature range Topr −30 to 95 °C Storage temperature range Tstg −40 to 100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test conditions Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.00 1.18 1.40 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA Peak emission wavelength λP IF = 10 mA ⎯ 940 ⎯ nm Dark current ID (ICEO) VCE = 24 V, IF = 0 ⎯ 0.001 0.1 μA Peak sensitivity wavelength λP ⎯ ⎯ 870 ⎯ nm Current transfer ratio IC/IF VCE = 2 V, IF = 10 mA 2.5 ⎯ 100 % Collector-emitter saturation voltage VCE (sat) IF = 20 mA, IC = 0.25 mA ⎯ 0.1 0.35 V Rise time tr ⎯ 15 50 Fall time tf VCE = 5 V, IC = 1 mA, RL = 1 kΩ ⎯ 15 50 μs |
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