TC74HC10AFN datasheet(3/8 Pages) TOSHIBA

Teilenummer	TC74HC10AFN

Bauteilbeschribung	CMOS Digital Integrated Circuit Silicon Monolithic Triple 3-Input NAND Gate

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TC74HC10AP/AF/AFN

2007-10-01

3

Electrical Characteristics

DC Characteristics

Test Condition

Ta

= 25°C

Ta

=

−40 to 85°C

Characteristics

Symbol

VCC (V)

Min

Typ.

Max

Min

Max

Unit

High-level input

voltage

VIH

⎯

2.0

4.5

6.0

1.50

3.15

4.20

⎯

1.50

3.15

4.20

⎯

V

Low-level input

voltage

VIL

⎯

2.0

4.5

6.0

⎯

0.50

1.35

1.80

⎯

0.50

1.35

1.80

V

IOH = −20 μA

2.0

4.5

6.0

1.9

4.4

5.9

2.0

4.5

6.0

⎯

1.9

4.4

5.9

⎯

High-level output

voltage

VOH

VIN

= VIH or VIL

IOH = −4 mA

IOH = −5.2 mA

4.5

6.0

4.18

5.68

4.31

5.80

⎯

4.13

5.63

⎯

V

IOL = 20 μA

2.0

4.5

6.0

⎯

0.0

0.1

⎯

0.1

Low-level output

voltage

VOL

VIN

= VIH or VIL

IOL = 4 mA

IOL = 5.2 mA

4.5

6.0

⎯

0.17

0.18

0.26

⎯

0.33

V

Input leakage

current

IIN

VIN = VCC or GND

6.0

⎯

±0.1

⎯

±1.0

μA

Quiescent supply

current

ICC

VIN = VCC or GND

6.0

⎯

1.0

⎯

10.0

μA

AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Output transition time

tTLH

tTHL

⎯

4

8

ns

Propagation delay time

tpLH

tpHL

⎯

6

12

ns

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