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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1091 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SA1091 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SA1091 2007-11-01 1 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Complementary to 2SC2551. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −300 V Collector-emitter voltage VCEO −300 V Emitter-base voltage VEBO −8 V Collector current IC −100 mA Base current IB −20 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −300 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −8 V, IC = 0 ⎯ ⎯ −0.1 μA Collector-base breakdown voltage V (BR) CBO IC = −0.1 mA, IE = 0 −300 ⎯ ⎯ V Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −300 ⎯ ⎯ V hFE (1) (Note) VCE = −10 V, IC = −20 mA 30 ⎯ 150 DC current gain hFE (2) VCE = −10 V, IC = −1 mA 20 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −20 mA, IB = −2 mA ⎯ ⎯ −0.5 V Base-emitter saturation voltage VBE (sat) IC = −20 mA, IB = −2 mA ⎯ ⎯ −1.2 V Transition frequency fT VCE = −10 V, IC = −20 mA 40 60 ⎯ MHz Collector output capacitance Cob VCB = −20 V, IE = 0, f = 1 MHz ⎯ 6 8 pF Note: hFE (1) classification R: 30~90 O: 50~150 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
Ähnliche Teilenummer - 2SA1091_07 |
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Ähnliche Beschreibung - 2SA1091_07 |
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