2SA1255 datasheet(2/5 Pages) TOSHIBA

Teilenummer	2SA1255

Bauteilbeschribung	High Voltage Switching Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SA1255

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −200 V, IE = 0

⎯

−0.1

μA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

⎯

−0.1

μA

Collector-base breakdown voltage

V (BR) CBO

IC = −0.1 mA, IE = 0

−200

⎯

V

Collector-emitter breakdown voltage

V (BR) CEO

IC = −1 mA, IB = 0

−200

⎯

V

DC current gain

hFE

(Note)

VCE = −3 V, IC = −10 mA

70

⎯

240

Collector-emitter saturation voltage

VCE (sat)

IC = −10 mA, IB = −1 mA

⎯

−0.2

−1

V

Base-emitter saturation voltage

VBE (sat)

IC = −10 mA, IB = −1 mA

⎯

−0.75

−1.5

V

Transition frequency

fT

VCE = −10 V, IC = −2 mA

50

100

⎯

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

⎯

3

7

pF

Turn-on time

ton

⎯

0.3

⎯

Storage time

tstg

⎯

2

⎯

Switching time

Fall time

tf

VCC = −50 V, IC = −6 mA

−IB1 = IB2 = 0.6 mA

Pulse width

= 5 μs

Duty cycle <= 2%

⎯

0.4

⎯

μs

Note: hFE classification O: 70~140, Y: 120~240

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