Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1298 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SA1298 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page 2SA1298 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −30 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −50 V, IC = 0 ⎯ ⎯ −0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −25 ⎯ ⎯ V Emitter-base breakdown voltage V (BR) EBO IE = −0.1 mA, IC = 0 −5 ⎯ ⎯ V hFE (1) (Note) VCE = −1 V, IC = −100 mA 100 ⎯ 320 DC current gain hFE (2) VCE = −1 V, IC = −800 mA 40 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −20 mA ⎯ ⎯ −0.4 V Base-emitter voltage VBE VCE = −1 V, IC = −10 mA −0.5 ⎯ −0.8 V Transition frequency fT VCE = −5 V, IC = −10 mA ⎯ 120 ⎯ MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF Note: hFE (1) classification O: 100~200, Y: 160~320 |
Ähnliche Teilenummer - 2SA1298 |
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Ähnliche Beschreibung - 2SA1298 |
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