Datenblatt-Suchmaschine für elektronische Bauteile |
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TLP668J Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TLP668J Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TLP668J(S) 2007-10-01 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V — — 10 μA Capacitance CT V = 0, f=1MHz — 30 — pF Peak off-state current IDRM VDRM =600V — 10 1000 nA Peak on-state voltage VTM ITM =100mA — — 3.0 V Holding current IH — — 0.6 — mA Critical rate of rise of off-state voltage dv/dt Vin=240Vrms , Ta=85°C 200 500 — V/μs Critical rate of rise of commutating voltage dv/dt(c) Vin=60Vrms , IT=15mA — 0.2 — V/μs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT =6V ,Resistive load — — 3 mA Inhibit voltage VIH IF =Rated IFT — — 50 V Leakage in inhibited state IIH IF =Rated IFT , VT =rated VDRM — 200 600 μA Capacitance (input to output) CS VS =0 , f=1MHz — 0.8 — pF Isolation resistance RS VS =500V 1×10 12 10 14 — Ω AC , 1minute 5000 — — AC , 1second,in oil — 10000 — Vrms Isolation voltage BVS DC , 1minute,in oil — 10000 — Vdc |
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