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2SA1681 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer 2SA1681
Bauteilbeschribung  Power Amplifier Applications Power Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1681 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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2SA1681
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −60 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −6 V, IC = 0
−0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−50
V
hFE (1)
VCE = −2 V, IC = −100 mA
120
400
DC current gain
hFE (2)
VCE = −2 V, IC = −1.5 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = −0.05 A
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = −0.05 A
−1.2
V
Transition frequency
fT
VCE = −2 V, IC = −100 mA
100
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
23
pF
Turn-on time
ton
0.1
Storage time
tstg
0.3
Switching time
Fall time
tf
0.1
μs
Marking
L
A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
−30 V
IB2
IB1
20 μs
IB1
IB2
−IB1 = IB2 = 0.05 A,
DUTY CYCLE ≤ 1%
OUTPUT
INPUT


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