Datenblatt-Suchmaschine für elektronische Bauteile |
|
TLP572 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
|
TLP572 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TLP572 2007-10-01 3 Individual Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA LED Capacitance CT V = 0, f = 1 MHz ⎯ 30 ⎯ pF Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA 55 ⎯ ⎯ V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 0.3 ⎯ ⎯ V VCE = 24 V ⎯ 10 200 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C ⎯ 0.5 10 μA Detector Capacitance (collector to emitter) CCE V = 0, f = 1 MHz ⎯ 10 ⎯ pF Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Current transfer ratio IC/IF IF = 1 mA, VCE = 1.2 V 1000 2000 ⎯ % Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IF = 10 mA 0.3 ⎯ 1.2 V Isolation Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0, f = 1 MHz ⎯ 0.8 ⎯ pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5 × 10 10 10 14 ⎯ Ω AC isolation voltage BVS AC, 1 minute 2500 ⎯ ⎯ Vrms |
Ähnliche Teilenummer - TLP572 |
|
Ähnliche Beschreibung - TLP572 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |