TA4303F

2007-11-01

5

Characteristic

Symbol

Rating

Unit

Supply voltage

6

V

Total power dissipation

1100

mW

Operating temperature

−20~85

°C

Storage temperature

−45~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: 100 cm2 × 1.6 t (Cu layer area: 36%) on glass epoxy resins.

Operating Ranges

Characteristic

Symbol

Rating

Unit

Supply voltage

4.75~5.25

V

Supply voltage

4.75~5.25

V

Input frequency range

fin

900~2150

MHz

IF Input frequency range

fIF

350~550

MHz

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Supply current

1

61

74

87

mA

Conversion gain

Gc

1

fin = 1.6 GHz, fIF = 400 MHz

14

18

25

dB

Noise figure

NF

1

fin = 1.6 GHz, fIF = 400 MHz

―

15

22

dB

Saturation output

1

fin = 1.6 GHz, fIF = 400 MHz

5

10

―

dBmW

Third-order intercept

IP3

1

fin = 1.596 GHz, 1.6 GHz

fIF = 400 MHz, 404 MHz

12

17

24

dBmW

Posc

1

fLO = 2.0 GHz

−14

−8

―

dBmW

Note 2: All electrical characteristics measured in Supply Voltage 5.0 V (Amp, OSC, OSC Buffer)

Characteristics

Symbol

Test

Circuit

Test Condition

Typ.

Unit

Supply current

1

36

mA

Supply current

1

38

mA

Note 3: All electrical characteristics measured in Supply Voltage 5.0 V (Amp, OSC, OSC Buffer)