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TC7MBL3245BFT Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TC7MBL3245BFT Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TC7MBL3245BFT/FK 2007-10-19 3 Electrical Characteristics DC Characteristics (Ta = −40 to 85°C) Characteristic Symbol Test Condition VCC (V) Min Typ. Max Unit High-level control input voltage VIH ⎯ 1.65 to 3.6 0.7 × VCC ⎯ ⎯ Low-level control input voltage VIL ⎯ 1.65 to 3.6 ⎯ ⎯ 0.3 × VCC V Control input current IIN VIN = 0 to 3.6 V 1.65 to 3.6 ⎯ ⎯ ±1.0 μA Power off leakage current IOFF OE = 0 to 3.6 V 0 ⎯ ⎯ 1.0 μA Off-stage leakage current (switch off) ISZ A, B = 0 to VCC, OE = VCC 1.65 to 3.6 ⎯ ⎯ ±1.0 μA VIS = 0 V, IIS = 30 mA (Note 1) 3.0 ⎯ 4 7 VIS = 3.0 V, IIS = 30 mA (Note 1) 3.0 ⎯ 6 9 VIS = 2.4 V, IIS = 15 mA (Note 1) 3.0 ⎯ 7 12 VIS = 0 V, IIS = 24 mA (Note 1) 2.3 ⎯ 4 8 VIS = 2.3 V, IIS = 24 mA (Note 1) 2.3 ⎯ 7 11 Switch ON-resistance (Note 2) RON VIS = 2.0 V, IIS = 24 mA (Note 1) 2.3 ⎯ 8 13 Ω Quiescent supply current ICC VIN = VCC or GND, IOUT = 0 3.6 ⎯ ⎯ 10 μA Note 1: All typical values are at Ta = 25°C. Note 2: Measured by voltage drop between A and B pins at indicated current through the switch. ON-resistance is determined by the lower of the voltages on the two pins (A or B). AC Characteristics (Ta = −40 to 85°C) Characteristic Symbol Test Condition VCC (V) Min Max Unit 3.3 ± 0.3 ⎯ 6 2.5 ± 0.2 ⎯ 7 Output enable time tpZL tpZH Figure 1, Figure 2 1.8 ± 0.15 ⎯ 11 ns 3.3 ± 0.3 ⎯ 6 2.5 ± 0.2 ⎯ 7 Output disable time tpLZ tpHZ Figure 1, Figure 2 1.8 ± 0.15 ⎯ 11 ns Capacitive Characteristics (Ta = 25°C) Characteristic (Note) Symbol Test Condition VCC (V) Typ. Unit Control input capacitance CIN 3.0 3 pF OE = VCC Switch Off 3.0 9 pF Switch terminal capacitance CI/O OE = GND Switch On 3.0 19 pF Note: This parameter is guaranteed by design. |
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