Datenblatt-Suchmaschine für elektronische Bauteile |
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TC7PA05FU Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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TC7PA05FU Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page TC7PA05FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA05FU Dual Inverter (Open Drain) Features • Operating voltage range: VCC = 1.8~3.6 V • High-speed operation: tpZL = 3.5 ns (max) at VCC = 3.0~3.6 V tpZL = 4.1 ns (max) at VCC = 2.3~2.7 V tpZL = 8.2 ns (max) at VCC = 1.8 V • High-level output current: IOL = 24 mA (min) at VCC = 3.0 V IOL = 18 mA (min) at VCC = 2.3 V IOL = 6 mA (min) at VCC = 1.8 V • 3.6-V tolerant inputs • 3.6-V power down protection outputs Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The IOUT absolute maximum rating must be adhered to. Note 2: VOUT < GND Weight: 0.0068 g (typ.) Characteristics Symbol Value Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~4.6 V DC output voltage VOUT −0.5~4.6 (Note 1) V Input diode current IIK −50 mA Output diode current IOK −50 (Note 2) mA DC output current IOUT +50 mA Power dissipation PD 200 mW DC VCC/ground current ICC ±100 mA Storage temperature Tstg −65~150 °C Product name E A E 1A GND 2A 1 2 3 6 4 5 1Y VCC 2Y Pin Assignment (top view) Marking |
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