2SK2879-01 datasheet(2/4 Pages) FUJI

Teilenummer	2SK2879-01

Bauteilbeschribung	N-CHANNEL SILICON POWER MOSFET FAP-2S Series

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Hersteller	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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Characteristics

2SK2879-01

FUJI POWER MOSFET

0

50

100

150

0

20

40

60

80

100

120

140

160

Power Dissipation

PD=f(Tc)

Tc [

oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

t=1

µs

Safe operating area

DC

100ms

10ms

1ms

100

µs

10

µs

VDS [V]

t

T

D=

t

T

0

5

10

15

20

25

30

35

0

10

20

30

40

50

5V

5.5V

4.5V

6V

8V

10V

VGS=20V

VDS [V]

Typical output characteristics

01

23

4

5

6

7

8

9

10

-2

10

-1

10

0

10

1

10

2

Typical transfer characteristic

VGS [V]

10

-2

10

-1

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

Typical forward transconductance

ID [A]

0

5

10

15

20

25

30

35

40

45

50

0

1

2

3

VGS=4.5V

5.5V

8V

20V

10V

6V

5V

ID [A]

Typical drain-source on-state resistance

ID=f(VDS):D=0.01,Tc=25°C

ID=f(VDS):80µs Pulse test,Tch=25°C

ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C

gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C

RDS(on)=f(ID):80µs Pulse test, Tch=25°C

Ähnliche Beschreibung - 2SK2879-01

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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Sanyo Semicon Device	2SK3685-01	109Kb / 4P	POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Hitachi Semiconductor	HAF2008	24Kb / 6P	SILICON N CHANNEL MOSFET SERIES POWER SWITCHING
Renesas Technology Corp	HAF2021	92Kb / 9P	Silicon N Channel MOSFET Series Power Switching
	HAF2007	95Kb / 9P	Silicon N Channel MOSFET Series Power Switching
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