Datenblatt-Suchmaschine für elektronische Bauteile |
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TC74VHC221AFK Datenblatt(PDF) 8 Page - Toshiba Semiconductor |
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TC74VHC221AFK Datenblatt(HTML) 8 Page - Toshiba Semiconductor |
8 / 15 page TC74VHC123,221AF/AFN/AFT/AFK 2007-10-19 8 Electrical Characteristics DC Characteristics Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) Min Typ. Max Min Max Unit High-level input voltage VIH ⎯ 2.0 3.0 to 5.5 1.50 VCC × 0.7 ⎯ ⎯ ⎯ ⎯ 1.50 VCC × 0.7 ⎯ ⎯ V Low-level input voltage VIL ⎯ 2.0 3.0 to 5.5 ⎯ ⎯ ⎯ ⎯ 0.50 VCC × 0.3 ⎯ ⎯ 0.50 VCC × 0.3 V IOH = −50 μA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 ⎯ ⎯ ⎯ 1.9 2.9 4.4 ⎯ ⎯ ⎯ High-level output voltage VOH VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 ⎯ ⎯ ⎯ ⎯ 2.48 3.80 ⎯ ⎯ V IOL = 50 μA 2.0 3.0 4.5 ⎯ ⎯ ⎯ 0.0 0.0 0.0 0.1 0.1 0.1 ⎯ ⎯ ⎯ 0.1 0.1 0.1 Low-level output voltage VOL VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 ⎯ ⎯ ⎯ ⎯ 0.36 0.36 ⎯ ⎯ 0.44 0.44 V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA RX/CX terminal off-state current IIN VIN = VCC or GND 5.5 ⎯ ⎯ ±0.25 ⎯ ±2.5 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA Active-state supply current (Note) ICC VIN = VCC or GND RX/CX = 0.5 VCC 3.0 4.5 5.5 ⎯ ⎯ ⎯ 160 380 560 250 500 750 ⎯ ⎯ ⎯ 280 650 975 μA Note: Per circuit |
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