Datenblatt-Suchmaschine für elektronische Bauteile |
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TC75S51FE Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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TC75S51FE Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 10 page TC75S51F/FU/FE 2007-11-01 2 Marking (top view) Pin Connection (top view) Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO 1 RS = 1 kΩ, RF = 100 kΩ ⎯ 2 10 mV Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA Common mode input voltage CMVIN 2 RS = 1 kΩ, RF = 100 kΩ 0 ⎯ 2.5 V Voltage gain (open loop) GV ⎯ ⎯ 60 70 ⎯ dB VOH 3 RL >= 100 kΩ 2.9 ⎯ ⎯ Maximum output voltage VOL 4 RL >= 100 kΩ ⎯ ⎯ 0.1 V Common mode input signal rejection ratio CMRR 2 VIN = 0.0~2.5 V 55 65 ⎯ dB Supply voltage rejection ratio SVRR 1 VDD = 1.5~7.0 V 60 70 ⎯ dB Supply current IDD 5 ⎯ ⎯ 60 200 μA DC Characteristics (VDD = 1.5 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO 1 RS = 10 kΩ, RF = 100 kΩ ⎯ 2 10 mV Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA Common mode input voltage CMVIN 2 RS = 10 kΩ, RF = 100 kΩ 0 ⎯ 1.0 V Voltage gain (open loop) GV ⎯ ⎯ 60 70 ⎯ dB VOH 3 RL >= 100 kΩ 1.4 ⎯ ⎯ Maximum output voltage VOL 4 RL >= 100 kΩ ⎯ ⎯ 0.1 V Supply current IDD 5 ⎯ ⎯ 50 150 μA Note: For this device, please use a source current of no more than 70 μA. VDD 5 IN ( −) 4 1 3 VSS 2 OUT IN ( +) S C 4 5 3 1 2 |
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