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TC75S57FE Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer TC75S57FE
Bauteilbeschribung  Single Comparator
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC75S57FE Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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TC75S57F/FU/FE
2007-11-01
3
Electrical Characteristics (unless otherwise specified, VDD = 5 V, VSS = GND, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
±1
±7
mV
Input offset current
IIO
1
pA
Input bias current
II
1
pA
Common mode input voltage
CMVIN
0
4.1
V
Supply current
IDD (Note)
110
220
μA
Voltage gain
GV
94
dB
Sink current
Isink
VOL = 0.5 V
13
25
mA
Source current
Isource
VOH = 4.5 V
9
21
mA
VOL
Isink = 5.0 mA
0.1
0.3
Output voltage
VOH
Isource = 5.0 mA
4.7
4.9
V
Operating supply voltage
VDD
1.8
7.0
V
tPLH (1)
Over drive
= 100 mV
140
Propagation delay time (turn on)
tPLH (2)
TTL step input
90
ns
tPHL (1)
Over drive
= 100 mV
90
Propagation delay time (turn off)
tPHL (2)
TTL step input
70
ns
tTLH
Over drive
= 100 mV
11
Response time
tTHL
Over drive
= 100 mV
7
ns
Electrical Characteristics (unless otherwise specified, VDD = 3 V, VSS = GND, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
±1
±7
mV
Input offset current
IIO
1
pA
Input bias current
II
1
pA
Common mode input voltage
CMVIN
0
2.1
V
Supply current
IDD (Note)
100
200
μA
Sink current
Isink
VOL = 0.5 V
6
18
mA
Source current
Isource
VOH = 2.5 V
3
15
mA
VOL
Isink = 5.0 mA
0.15
0.35
Output voltage
VOH
Isource = 5.0 mA
2.65
2.85
V
Propagation delay time (turn on)
tPLH
Over drive
= 100 mV
110
ns
Propagation delay time (turn off)
tPHL
Over drive
= 100 mV
90
ns
tTLH
Over drive
= 100 mV
7
Response time
tTHL
Over drive
= 100 mV
8
ns
Note: This device’s current consumption increases as its operating frequency increases. Note that the power
dissipation should not exceed the allowable power dissipation.


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