Datenblatt-Suchmaschine für elektronische Bauteile |
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TC9350BFN-T01 Datenblatt(PDF) 9 Page - Toshiba Semiconductor |
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TC9350BFN-T01 Datenblatt(HTML) 9 Page - Toshiba Semiconductor |
9 / 18 page TC9350BFN-T00,TC9350BFN-T01 2004-01-20 9 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Storage temperature range Tstg −40~ + 150 °C Operating ambient temperature range TA 0~ + 70 °C Power supply voltage VDD −0.5~ + 5.5 V DC input voltage VIN −0.5~ VDD + 0.25 V DC output voltage at high impedance VOUT −0.5~ VDD + 0.25 V LED output pin current ILED 70 mA VCNT output pin current IVCNT 7 mA SDIO output pin current ISDIO 5 mA SCK output pin current ISCK 5 mA Power consumption PD 100 mW Elector static destruction VESD MIL: −2 k~ + 2 k V Latch up current ILATCH 200 mA Electrical Characteristics (Ta = 25°C) (1) General Characteristics Symbol Test Condition Min Typ. Max Unit Power supply voltage 2 VDD 4.35 5.0 5.25 V Power supply current (normal operation) IDD IC only. ⎯ ⎯ 5 mA Power supply current (suspend mode) ISB IC only. ⎯ ⎯ 250 µA (2) USB interface Characteristics Symbol Test Condition Min Typ. Max Unit Output High voltage VOH 2.8 ⎯ 3.6 V Output Low voltage VOL ⎯ ⎯ 0.3 V Differential signal input common mode range VCM 0.8 ⎯ 2.5 V A receiving part single end input threshold voltage VSE 0.8 ⎯ 2.0 V Data rising time TR C = 350 pF (10% to 90%) 75 ⎯ 300 ns Data falling time TF C = 350 pF (10% to 90%) 75 ⎯ 300 ns Rising/Falling matching TLRFM 80 ⎯ 125 % Output cross voltage VCRS 1.3 ⎯ 2.0 V Applied to pins DM, DP |
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