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TD62082APG Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TD62082APG Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 13 page TD62081~084APG/AFG 2006-06-13 3 Recommended Operating Conditions (Ta = −40 to 85°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output sustaining voltage VCE (SUS) 0 ⎯ 50 V Tpw = 25 ms, Duty = 10% 8 circuits 0 ⎯ 347 APG Tpw = 25 ms, Duty = 50% 8 circuits 0 ⎯ 123 Tpw = 25 ms, Duty = 10% 8 circuits 0 ⎯ 268 Output current AFG IOUT Tpw = 25 ms, Duty = 50% 8 circuits 0 ⎯ 90 mA/ch Input voltage Except TD62081APG/AFG VIN 0 ⎯ 30 V TD62082APG/AFG 14 ⎯ 30 TD62083APG/AFG 2.5 ⎯ 30 Input voltage (Output on) TD62084APG/AFG VIN (ON) 8 ⎯ 30 V TD62082APG/AFG 0 ⎯ 7.4 TD62083APG/AFG 0 ⎯ 0.5 Input voltage (Output off) TD62084APG/AFG VIN (OFF) 0 ⎯ 1.0 V Input current Only TD62081APG/AFG IIN 0 ⎯ 5 mA Clamp diode reverse voltage VR ⎯ ⎯ 50 V Clamp diode forward current IF ⎯ ⎯ 400 mA APG ⎯ ⎯ 0.52 Power dissipation AFG PD ⎯ ⎯ 0.4 W |
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