Datenblatt-Suchmaschine für elektronische Bauteile |
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TD62784AP Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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TD62784AP Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page TD62783,784AP/AF 2006-06-14 4 Test Circuit 1. ICEX 2. VCE (sat) 3. IIN (ON), ICC 4. VIN (ON), VIN (OFF) 5. IR 6. VF 7. tON, tOFF Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: CL includes probe and jig capacitance. Precautions for Using This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. VIN ICEX VCC VIN IOUT VCC VCE (sat) VIN IIN (ON) VCC VIN (ON), VIN (OFF) IOUT VCC VCE tON tOFF VIH VOH VOL Input 50% 50 µs Output 50% 50% 50% 0 VF IF Open VR IR VCC Input CL (Note 2) (Note 1) VIN Pulse generator VCC RL |
Ähnliche Teilenummer - TD62784AP |
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Ähnliche Beschreibung - TD62784AP |
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