Datenblatt-Suchmaschine für elektronische Bauteile |
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TLPGE53TF Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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TLPGE53TF Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 12 page TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F) 2007-10-01 5 TLSE53T(F) 1.6 50 30 10 3 1 5 100 Ta = 25°C 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward voltage VF (V) IF – VF Forward current IF (mA) IV – IF Case temperature Tc (°C) IV – Tc Wavelength λ (nm) Relative luminous intensity – Wavelength Ambient temperature Ta (°C) IF – Ta Radiation pattern Ta = 25°C 30 ° 0 ° 60 ° 90 ° 90 ° 30 ° 60 ° 1.0 0.8 0.6 0.4 0.2 0 80 ° 70 ° 50 ° 40 ° 20 ° 10 ° 70 ° 80 ° 50 ° 40 ° 20 ° 10 ° 10 1 100 10000 1000 Ta = 25°C 100 10 0 60 0 40 80 20 120 20 40 60 80 100 680 0.8 0 0.6 1.0 0.2 0.4 IF = 20 mA Ta = 25°C 660 640 620 600 580 560 20 −20 80 0.1 3 1 0.3 0.5 0 40 60 |
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