TSC5301DCTA3 datasheet(1/5 Pages) TSC

Teilenummer	TSC5301DCTA3

Bauteilbeschribung	High Voltage NPN Transistor with Diode

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Hersteller	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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TSC5301D

High Voltage NPN Transistor with Diode

1/5

Version: A07

TO-92

PRODUCT SUMMARY

BVCEO

400V

BVCBO

700V

IC

1A

VCE(SAT)

1.1V @ IC / IB = 1A / 0.25A

Features

●

Build-in Free-wheeling Diode Makes Efficient Anti-saturation

Operation

●

No Need to Interest an hfe Value Because of Low Variable

Storage-time Spread Even Though Comer Spirit Product.

●

Low Base Drive Requirement

●

Suitable for Half Bridge Light Ballast Application

Structure

●

Silicon Triple Diffused Type

●

NPN Silicon Transistor with Diode

Ordering Information

Part No.

Package

Packing

TSC5301DCT B0

TO-92

1Kpcs / Bulk

TSC5301DCT A3

TO-92

2Kpcs / Ammo

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

VCBO

700V

V

Collector-Emitter Voltage

VCEO

400V

V

Emitter-Base Voltage

VEBO

10

V

Collector Current

IC

1

A

Collector Peak Current (tp <5ms)

ICM

2

A

Base Current

IB

0.5

A

Base Peak Current (tp <5ms)

IBM

1

A

Total Dissipation @ Tc ≤ 25

oC

Ptot

0.6

W

Maximum Operating Junction Temperature

TJ

+150

oC

Storage Temperature Range

TSTG

-65 to +150

oC

Block Diagram

Pin Definition:

1. Base

2. Collector

3. Emitter

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TSC5301DCTA3 Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

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