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TSC5302D Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Teilenummer TSC5302D
Bauteilbeschribung  High Voltage NPN Transistor with Diode
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5302D Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSC5302D
High Voltage NPN Transistor with Diode
1/6
Version: A07
TO-251
(IPAK)
TO-252
(DPAK)
Features
●
Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
●
No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
●
Low Base Drive Requirement
●
Suitable for Half Bridge Light Ballast Application
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor with Diode
Ordering Information
Part No.
Package
Packing
TSC5302DCP RO
TO-252
2.5Kpcs / 13” Reel
TSC5302DCH C5
TO-251
70pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
2
A
Collector Peak Current (tp <5ms)
ICM
4
A
Base Current
IB
1
A
Base Peak Current (tp <5ms)
IBM
2
A
TO-251
25
Total Dissipation @ Tc ≤ 25
oC
TO-252
Ptot
1.5
W
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-65 to +150
oC
Block Diagram
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
2A
VCE(SAT)
1.1V @ IC / IB = 1A / 0.25A


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