2SK2890-01MR datasheet(1/4 Pages) FUJI

Teilenummer	2SK2890-01MR

Bauteilbeschribung	N-CHANNEL SILICON POWER MOSFET

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Hersteller	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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1

TO-220F

Item

Symbol

Rating

Unit

Remarks

Drain-source voltage

VDS

30

Continuous drain current

ID

±50

Pulsed drain current

ID[puls]

±200

Gate-source peak voltage

VGS

±16

Maximum avalanche energy

EAV

1441.5

Maximum power dissipation

PD

50

Operating and storage

Tch

+150

temperature range

Tstg

2SK2890-01MR

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Equivalent circuit schematic

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

V

A

V

mJ

W

°C

-55 to +150

FAP-IIIB SERIES

Electrical characteristics (Tc =25°C unless otherwise specified)

Thermal characteristics

Item

Symbol

Zero gate voltage drain current

IDSS

Min.

Typ.

Max.

Units

V

µA

mA

nA

m

Ω

m

Ω

S

pF

ns

A

V

ns

µC

Min.

Typ.

Max.

Units

Thermal resistance

Rth(ch-c)

Rth(ch-a)

2.50

62.5

°C/W

Symbol

V(BR)DSS

VGS(th)

IGSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

IAV

VSD

trr

Qrr

Test Conditions

ID=1mA

VGS=0V

ID=1mA

VDS=VGS

VDS=30V

VGS=0V

Tch=25°C

Tch=125°C

VGS=±16V VDS=0V

ID=50A

VGS=10V

ID=50A

VDS=25V

VGS=0V

f=1MHz

VCC=15V RG=10

Ω

ID=100A

VGS=10V

L=100

µH

Tch=25°C

IF=50A VGS=0V Tch=25°C

IF=50A

-di/dt=100A/

µs Tch=25°C

30

1.0

1.5

2.0

10

500

0.2

1.0

10

100

8.0

10.5

5.3

6.8

35

70

3900

5850

2000

3000

850

1280

17

30

70

120

250

380

180

270

50

1.0

1.5

65

0.12

Gate(G)

Source(S)

Drain(D)

Outline Drawings

Features

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

www.fujielectric.co.jp/fdt/scd

*1 L=0.769mH, Vcc=12V

Item

Drain-source breakdown voltage

Gate threshold voltage

Gate-source leakage current

Drain-source on-state resistance

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

*1

VGS=4V

VGS=10V

200509

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