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SI4850EY Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI4850EY Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si4850EY Vishay Siliconix Document Number: 71146 S-40572—Rev. D, 29-Mar-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 8 16 24 32 40 0 2 4 6 8 10 04 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 −50 −25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 1400 0 102030 405060 Crss Coss Ciss VDS = 30 V ID = 6.0 A VGS = 10 V ID = 6.0 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) VGS = 4.5 V 2.0 2.5 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 2468 10 1 10 50 ID = 6.0 A 0.00 0.5 1.0 1.5 TJ = 25_C TJ = 175_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) |
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