Datenblatt-Suchmaschine für elektronische Bauteile |
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IRHY7G30CMSE Datenblatt(PDF) 3 Page - International Rectifier |
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IRHY7G30CMSE Datenblatt(HTML) 3 Page - International Rectifier |
3 / 8 page International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics Fig a. Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page www.irf.com 3 IRHY7G30CMSE Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter 100K Rads (Si) Units Test Conditions Min Max BVDSS Drain-to-Source Breakdown Voltage 1000 — V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 1.4 4.5 VGS = VDS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 50 µA VDS=800V, VGS=0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) — 15 Ω VGS = 12V, ID = 0.76A RDS(on) Static Drain-to-Source VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 1.2A On-State Resistance (TO-257) — 15 Ω VGS = 12V, ID = 0.76A 0 100 200 300 400 500 600 700 800 900 0 -5 -10 -15 -20 VGS Br I Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range V DS (V) MeV/(mg/cm2)) (MeV) (µm) @V GS =0V @V GS =-5V @V GS =-10V @V GS =-15V I 59.8 343 32.6 400 400 350 250 Br 36.8 305 39 775 775 775 775 @V GS =-20V 200 775 |
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