International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

www.irf.com

3

IRHY7G30CMSE

Parameter

100K Rads (Si)

Units

Test Conditions

ˆ

Min

Max

Drain-to-Source Breakdown Voltage

1000

—

V

Gate Threshold Voltage

1.4

4.5

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

50

µA

Static Drain-to-Source

„

On-State Resistance (TO-3)

—

15

Ω

Static Drain-to-Source

„

Diode Forward Voltage

„

—

1.2

V

On-State Resistance (TO-257)

—

15

Ω

0

100

200

300

400

500

600

700

800

900

0

-5

-10

-15

-20

VGS

Br

I

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy

Range

V

DS

(V)

(MeV)

(µm)

@V

GS

=0V @V

GS

=-5V @V

GS

=-10V @V

GS

=-15V

I

59.8

343

32.6

400

400

350

250

Br

36.8

305

39

775

775

775

775

@V

GS

=-20V

200

775